Studies of crystallization kinetics in a-Se(80-x)Te(20)Cdx and a-Se80-xTe20Gex alloys using DC conductivity measurements

摘要

The crystallization kinetics of a-Se80-xTe20Cdx (x=0, 5, 10, 15) and a-Se80-xTe20Gex (x=5, 15, 20) alloys has been studied by an isothermal method. For this purpose, conductivity measurements are done during isothermal annealing at various temperatures between the glass transition and crystallization temperatures.