首页> 外文期刊>Journal of the Optical Society of America, B. Optical Physics >Wavelength-selective infrared absorptance of heavily doped silicon complex gratings with geometric modifications
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Wavelength-selective infrared absorptance of heavily doped silicon complex gratings with geometric modifications

机译:具有几何修饰的重掺杂硅复杂光栅的波长选择红外吸收率

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摘要

Wavelength-selective infrared (IR) absorptance of modified complex gratings of heavily doped silicon with nanoscale features is studied by a finite-difference time-domain numerical scheme. The purpose of this work is to demonstrate the possibility of using complex gratings and nanoscale surface features to modify far-field radiative properties. By properly choosing the carrier concentration and geometry, silicon complex gratings exhibit a broadband absorptance peak resulting from the excitation of surface plasmon polaritons. Meanwhile, the absorptance of four modified complex gratings with attached features has been numerically investigated for their impact. First, the first peaks of the absorptance spectra of gratings due to Wood's anomaly remain unchanged; the second peaks shift toward longer wavelengths in modified complex gratings, as compared with complex gratings without attached features. The modified complex gratings with attached features on both sides of the ridges have the most obvious effect on the absorptance spectral shift. Second, the spectral absorptance curves of complex gratings with square features in three sizes (100, 200, and 300nm) are compared and show that the peak wavelength shifts toward longer wavelengths with enlarged feature size. These combined effects of doped silicon, complex gratings, and the addition of submicrometer-sized features to grating side walls can be used for further tailoring thermal radiative properties, which may be very useful for enhancing the performance of IR detectors.
机译:通过时域有限差分数值方法研究了具有纳米尺度特征的重掺杂硅改性复合光栅的波长选择红外吸收率。这项工作的目的是演示使用复杂的光栅和纳米级表面特征来修改远场辐射特性的可能性。通过适当选择载流子浓度和几何形状,硅复合光栅显示出由于表面等离激元极化子的激发而产生的宽带吸收峰。同时,对四个具有附加特征的改进型复杂光栅的吸收率进行了数值研究。首先,由于伍德异常引起的光栅吸收率光谱的第一个峰值保持不变。与没有附加特征的复杂光栅相比,修改后的复杂光栅中的第二个峰向更长的波长移动。脊两侧都具有附加特征的改进型复杂光栅对吸收率光谱偏移的影响最为明显。其次,比较了具有三种尺寸(100、200和300nm)的方形特征的复杂光栅的光谱吸收率曲线,结果表明,随着特征尺寸的增大,峰值波长向更长的波长偏移。掺杂硅,复杂光栅以及在光栅侧壁上添加亚微米尺寸特征的这些综合效果可用于进一步调整热辐射特性,这对于增强IR检测器的性能可能非常有用。

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