首页> 外文期刊>Journal of the Optical Society of America, B. Optical Physics >Goos-H?nchen and Imbert-Fedorov shifts at the interface of ordinary dielectric and topological insulator
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Goos-H?nchen and Imbert-Fedorov shifts at the interface of ordinary dielectric and topological insulator

机译:Goos-H?nchen和Imbert-Fedorov在普通介电体和拓扑绝缘体的界面处发生位移

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摘要

Using Yasumoto and Oishi's energy flux method, we evaluated the Goos-H?nchen (GH) and Imbert-Fedorov (IF) shifts of beam incident from the ordinary dielectric upon the topological insulator (TI) with totally internal reflection. Comparing with the case of two ordinary isotropic dielectrics, it is found that the topological parameter Θ of TI can affect two shifts. More important, IF shift appears even for a linear polarized TE or TM beam and achieves the maximum with elliptical polarization, which completely originates from the TI's intrinsic magnetoelectric coupling effect. This observation provides an optical experimental approach to determine the topological parameters Θ and provide a new way to control the GH shift and IF shift.
机译:使用Yasumoto和Oishi的能量通量方法,我们评估了从普通电介质入射到具有全内反射的拓扑绝缘体(TI)的光束的Goos-H?nchen(GH)和Imbert-Fedorov(IF)的位移。与两种普通的各向同性电介质的情况相比,发现TI的拓扑参数Θ会影响两个位移。更重要的是,即使对于线性极化的TE或TM光束,IF偏移也会出现,并在椭圆极化时达到最大值,这完全源于TI的固有磁电耦合效应。该观察结果提供了一种光学实验方法来确定拓扑参数Θ,并提供了一种控制GH偏移和IF偏移的新方法。

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