Achromatic angle-insensitive infrared quarter-wave retarder based on total internal reflection at the Si-SiO_(2) interface

摘要

An achromatic infrared (λ=1.2-4 μm), Si-prism quarter-wave retarder (QWR) is described that uses total internal reflection at a buried Si-SiO_(2) interface at an angle of incidence φ near 33°, where partial derivΔ/partial derivφ=0. The retardance Δ deviates from 90° by <±2° within a field of view of ±10° (in air) over the entire bandwidth. Because the SiO_(2) layer at the base of the prism is optically thick, this QWR is unaffected by environmental contamination.