Electrosynthesis and characterisation of CdSeHgTl thin films

摘要

Thallium containing CdSeHg films have been elect rosynthesised at -0.600 V vs SCE on titanium substrate from the aqueous solution. Electrochemical properties of the films were investigated in I-2/I-redox solution. Films were found to be p-type conductor with charge carrier level 10(25). The carrier concentration, flat band potential of the film were determined from capacitance measurements. The films were characterized with scanning electron microscopy (SEM) combined with energy dispersive X-ray analysis (EDAX) system. The corrosion characteristics of the films have been studied by polarization technique. The inhibitor, inhibits corrosion effectively even in trace amount. This is the study to investigate the effect of thallium concentration on the composition, capacitance, photoactivity, morphology and corrosion parameters of the CdSeHgTI films electrosynthesised by electro deposition.