Raman Scattering Investigation of Polycrystalline 3C-SiC FilmDeposited on SiO_2 by Using APCVD with Hexamethyldisilane

摘要

This paper describes the Raman scattering characteristics of polycrystalline (poly) 3C-SiC films,which were deposited on thermally oxidized Si(100) substrates by using the atmosphere pressurechemical vapor deposition (APCVD) method at various growth temperatures. The TO and theLO phonon modes for 2.0 pm-thick poly 3C-SiC deposited at 1180 °C were observed at 794.4 and965.7 cm~(-1), respectively. From intensity ratio of I_((LO))/TO))≈1.0 and the broad full widthhalf maximum (FWHM) of the TO modes, 3C-SiC was clearly seen to form polycrystals instead ofdisordered crystals and the crystal defects were seen to be small. At the interface between 3C-SiCand SiO_2, 1122.6 cm~(-1)related to C-O bonding was measured. Here, poly 3C-SiC admixes withnanoparticle graphite with the Raman shifts of the D and the G bands of C-C bonding 1355.8 and1596.8 cm~(-1). Using the TO mode for 2.0 μm thick poly 3C-SiC, we calculated biaxial stress as428 MPa.