Transparent Conductive ITZO Films Deposited by Using a Magnetron Co-Sputtering System Using Two Cathodes

摘要

Zn-doped indium-tin-oxide (ITZO) films were deposited on non-alkali glass substrates by using magnetron co-sputtering system with two cathodes (DC and RF) at substrate temperatures ranging from room temperature (RT) to 200 °C. The crystallinity of the ITO films decreased with increasing Zn content, which led to a decrease in surface roughness. On the other hand, the resistivity of the ITZO films remained relatively constant with increasing Zn content at relatively high substrate temperatures (170 and 200 °C). The etching rate of the ITZO films depended on both the Zn content and the film's microstructure. Overall, ITZO films have electrical properties comparable to ITO films as well as an amorphous structure at temperatures above the crystallization temperature of ITO films.