Erratum: An Explanation of Efficiency Droop in InGaN-based Light Emitting Diodes: Saturated Radiative Recombination Rate at Randomly Distributed In-Rich Active Areas

Jong-In Shim; Hyunsung Kim; Dong-Soo Shin; Han-Youl Yoo

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Erratum: An Explanation of Efficiency Droop in InGaN-based Light Emitting Diodes: Saturated Radiative Recombination Rate at Randomly Distributed In-Rich Active Areas

机译：勘误表：基于InGaN的发光二极管中的效率下降的解释：随机分布的富裕有源区域的饱和辐射复合速率

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Erratum: An Explanation of Efficiency Droop in InGaN-based Light Emitting Diodes: Saturated Radiative Recombination Rate at Randomly Distributed In-Rich Active Areas

机译：勘误表：基于InGaN的发光二极管中的效率下降的解释：随机分布的富裕有源区域的饱和辐射复合速率

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《Journal of the Korean Physical Society》 |2011年第4期|共1页
作者
Jong-In Shim; Hyunsung Kim; Dong-Soo Shin; Han-Youl Yoo;
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原文格式 PDF
正文语种 eng
中图分类物理学;
关键词
Efficiency; Recombination; Randomly;

机译：效率;重组;随意;

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1. Erratum: An Explanation of Efficiency Droop in InGaN-based Light Emitting Diodes: Saturated Radiative Recombination Rate at Randomly Distributed In-Rich Active Areas [J] . Jong-In Shim, Hyunsung Kim, Dong-Soo Shin, Journal of the Korean Physical Society . 2011,第4期

机译：勘误表：基于InGaN的发光二极管中的效率下降的解释：随机分布的富裕有源区域的饱和辐射复合速率
2. An Explanation of Efficiency Droop in InGaN-based Light Emitting Diodes: Saturated Radiative Recombination Rate at Randomly Distributed In-Rich Active Areas [J] . Jong-In Shim, Hyunsung Kim, Dong-Soo Shin, Journal of the Korean Physical Society . 2011,第3期

机译：基于InGaN的发光二极管中效率下降的解释：随机分布的富裕有源区的饱和辐射复合速率
3. Improvement of Radiative Recombination Rate and Efficiency Droop of InGaN Light Emitting Diodes with In-Component-Graded InGaN Barrier [J] . Chuanyu Jia, Chenguang He, Zhiwen Liang, Physica status solidi (a) Applications and materials science . 2021,第20期

机译：用组分分级Ingan屏障的IngaN发光二极管辐射重组率和效率下垂的提高
4. An efficiency droop model of the saturated radiative recombination rate and its verification by radiative and nonradiative carrier lifetime measurements in InGaN-based light emitting diodes [C] . Jong-In Shim, Hyunsung Kim, Dong-Soo Shin, Gallium nitride materials and devices VI . 2011

机译：InGaN基发光二极管中饱和辐射复合速率的效率下降模型及其通过辐射和非辐射载流子寿命测量的验证
5. Peak radiative efficiency and electron-drift-induced efficiency droop in iii-v nitride-based light-emitting diodes. [D] . Lin, Guan-Bo. 2013

机译：iii-v氮化物基发光二极管的峰值辐射效率和电子漂移引起的效率下降。
6. A Review on Experimental Measurements for Understanding Efficiency Droop in InGaN-Based Light-Emitting Diodes [O] . Lai Wang, Jie Jin, Chenziyi Mi, 2017

机译：理解基于InGaN的发光二极管效率下降的实验方法综述
7. Effects of a Reduced Effective Active Region Volume on Wavelength-Dependent Efficiency Droop of InGaN-Based Light-Emitting Diodes [O] . Panpan Li, Yongbing Zhao, Xiaoyan Yi, 2018

机译：减小有效有效区域体积对incAn基发光二极管波长依赖性效率下降的影响

Erratum: An Explanation of Efficiency Droop in InGaN-based Light Emitting Diodes: Saturated Radiative Recombination Rate at Randomly Distributed In-Rich Active Areas

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