Temperature Effect of a Si-Doped MgO Protective Layer on the Discharge Characteristics of an AC-PDP

摘要

This article reports misfiring and discharge time lag properties as well as temperature- dependentvoltages and jitter of an AC-PDP, related to the effect of a small amount of Si doping in theMgO protecting layer. In order to improve the high-temperature and low-temperature misfiringand the discharge time lag properties, we used Si-doped MgO pellets while the MgO layer wasbeing deposited on 4-inch test panels by using an electron-beam evaporation method. When thetemperature was much higher or lower than room temperature (20 °C), the voltage differencebetween the sustain voltage Vs and the firing voltage Vf increased. The results can probably beattributed to a change in the secondary electron emission coefficient caused by a change in theenergy band structure and the surface properties. The discharge time lag of the Si-doped MgOlayer with temperature variation is lower with that for pure MgO.