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Study of the electric field screening effect for field emitter arrays

机译:场发射器阵列的电场屏蔽效应研究

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Understanding the influence of the interaction of emitters on the field emission performance of a field emitter array is of great importance for the design of a multi-emitter device. In this work, a screening factor S is defined to quantify the effect of electric field screening due to the interaction of emitters in an array. A three-dimensional finite integration technique is used to study the electric field screening effect for Spindt-type field emitter arrays which have potential applications in flatscreen displays and high-power vacuum electronics. The dependences of the electric field screening on the tip-to-tip spacing, half-angle of the emitter, height of the emitter and radius of the tip's curvature are analyzed. The effects of the variations in the size of the emitter's geometry on the most efficient arrangement to achieve maximum emission efficiency in an array are discussed.
机译:理解发射器相互作用对场发射器阵列的场发射性能的影响对于多发射器器件的设计非常重要。在这项工作中,定义了屏蔽因子S以量化由于阵列中的发射器的相互作用而引起的电场屏蔽的效果。三维有限积分技术用于研究Spindt型场致发射器阵列的电场屏蔽效果,该阵列在平面显示器和大功率真空电子设备中具有潜在的应用。分析了电场屏蔽对尖端到尖端间距,发射器半角,发射器高度和尖端曲率半径的依赖性。讨论了发射器几何尺寸的变化对在阵列中实现最大发射效率的最有效布置的影响。

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