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首页> 外文期刊>Journal of the Korean Physical Society >Thin Transparent Single-Crystal Silicon Membranes MadeUsing a Silicon-on-Nitride Wafer
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Thin Transparent Single-Crystal Silicon Membranes MadeUsing a Silicon-on-Nitride Wafer

机译:使用氮化硅晶圆制造的薄透明单晶硅膜

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摘要

We have produced various transparent silicon membrane applications, such as solar cells, mi-crostructures, sensors and displays by using silicon-on-nitride (SON) wafers. We first tried to makethem by using silicon-on-insulator (SOI) wafers and a buried layer of SiO_2 as an etch-stop layer.However, during the wet-etching process, the buried SiO_2 layer did not completely block the potas-sium hydroxide (KOH) etchant. The silicon membrane eventually formed micro-cracks and themembrane broke along the line of micro-cracks. Because the etching selectivity between Si andSiO_2 is only 200 : 1 in 30 % KOH at 80 °C, the nanometer-order thickness of SiO_2 is insufficient fora suitable etch-stop layer. We have, therefore, developed a wafer that combines a dielectric etch-stop layer with a SOI wafer and that makes it possible to produce transparent silicon membranesof various thicknesses.
机译:我们已经使用氮化硅(SON)晶片生产了各种透明的硅膜应用,例如太阳能电池,微结构,传感器和显示器。我们首先尝试使用绝缘体上硅(SOI)晶圆和SiO_2掩埋层作为蚀刻停止层来制造它们,但是在湿法蚀刻过程中,掩埋的SiO_2层并没有完全阻挡钾氢氧化物(KOH)蚀刻剂。硅膜最终形成微裂纹,并且膜沿微裂纹线破裂。因为在80℃下,在30%KOH中,Si和SiO_2之间的蚀刻选择性仅为200:1,因此SiO_2的纳米级厚度不足以形成合适的蚀刻终止层。因此,我们已经开发了一种将介电蚀刻停止层与SOI晶片结合在一起的晶片,从而可以生产各种厚度的透明硅膜。

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