Novel Method of Improving Electrical Properties of Thin PECVD Oxide Films by Fluorination of Silicon Surface Region by RIE in RF CF_(4) Plasma

摘要

This study describes a novel technique to form good quality low temperature oxide (<350 deg C). Low temperature oxide was formed by N_(2)O + SiH_(4):N_(2) plasma in a plasma enhanced chemical vapour deposition (PECVD) system on the silicon surface reactively etched in CF_(4) plasma (RIE - reactive ion etching). The fabricated oxide demonstrated excellent (for low temperature dielectric formation process) current-voltage (I-V) characteristics, such as: low leakage current, high breakdown voltage and good reliability. Experimental results indicate that the proposed method of fluorine incorporation into the SiO_(2)/Si inteface improves electrical parameters of MOS structures.