A comparative study of thin film transistors using mixed rare earth oxides as gates

摘要

A comparative study of CdSe/La{sub}2O{sub}3+Nd{sub}2O{sub}3;, CdSe/La{sub}2O{sub}3+Pr{sub}6O{sub}11 and CdSe/Dy{sub}2O{sub}3+Eu{sub}2O{sub}3 thin film transistor is presented. The mixtures of oxides were in the ratio of 1:1 by weight. Various parameters such as transconductance, output resistance, amplification factor. gain bandwidth product, mobility, concentration of traps, critical donor density and grain size were determined and are presented.