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首页> 外文期刊>Journal of the European Ceramic Society >UV laser microprocessing and post chemical etching on ultrathin Al_2O_3 ceramic substrate
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UV laser microprocessing and post chemical etching on ultrathin Al_2O_3 ceramic substrate

机译:在超薄Al_2O_3陶瓷基板上进行UV激光微加工和化学后蚀刻

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摘要

In this study, an Nd:YVO_4 UV laser was used for microprocessing ultrathin (125 ìm) ceramic plates for use as a multi-layer microchip substrate. The effects of the UV laser microprocessing parameters, including laser power density, frequency, laser scanning speed, and pass delay on microprocessing accuracy and quality (kerf width and arithmetic average roughness R_a on the kerf sidewall) were investigated by means of a 4 x 4 orthogonal design. The key processing parameters were determined and optimized for small kerf width and minimal R_a of the kerf sidewall while retaining high production efficiency. Subsequent chemical etching of the laser processed areas was performed to reduce the kerf surface and kerf sidewall roughness by removing debris and the thin recast layer for the required size precision and post gilding treatment. The results showed that a clean surface and crack-free kerf sidewall with roughness R_a of 0.16 ìm could be achieved by laser microprocessing and chemical etching.
机译:在这项研究中,Nd:YVO_4 UV激光器用于微加工超薄(125μm)陶瓷板,用作多层微芯片基板。通过4 x 4的方法研究了UV激光微加工参数(包括激光功率密度,频率,激光扫描速度和通过延迟)对微加工精度和质量(切缝侧壁上的切缝宽度和算术平均粗糙度R_a)的影响。正交设计。确定并优化关键加工参数,以实现较小的切缝宽度和最小的切缝侧壁R_a,同时保持较高的生产效率。随后进行激光加工区域的化学蚀刻,以通过去除碎屑和较薄的重铸层来减小切缝表面和切缝侧壁粗糙度,以达到所需的尺寸精度并进行镀金后处理。结果表明,通过激光微加工和化学蚀刻可以实现表面R_a为0.16μm的干净表面和无裂纹的切缝侧壁。

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