Preparation and characterization of Zn~(18)O/Zn~(16)O isotope heterostructure thin films

摘要

An oxygen isotope-based heterostructure zinc oxide (ZnO) thin film, Zn~(16)O/Zn~(18)O/Zn~(16)O, was made by pulsed laser deposition on an a-face sapphire substrate. The isotope-enriched Zn~(18)O layer was made by irradiation of the isotope oxygen radical (~(18)O*). The isotopic ratio in the heterostructure film was analyzed via secondary ion mass spectroscopy (SIMS). The ratio of exchange from ~(16)O to ~(18)O was approximately 70 percent when the oxygen isotope was irradiated as a radical, while it was approximately 10 percent when the oxygen isotope was supplied as ~(18)O_2 gas.