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首页> 外文期刊>Journal of the European Ceramic Society >Doping behaviors of dysprosium, yttrium and holmium in BaTiO_3 ceramics
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Doping behaviors of dysprosium, yttrium and holmium in BaTiO_3 ceramics

机译:BaTiO_3陶瓷中s,钇和的掺杂行为

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摘要

The difference in doping behaviors of intermediate rare-earth ions and their effects on the dielectric property and microstructure of BaTiO_3(BT)-MgO-Re_2O_3 (Re = Dy, Ho, Y) system were investigated. Compared to Y and Ho, Dy ions provided BT ceramics with a high rate of densification and much enhanced shell formation due to their high solubility in BT. However, the microstructure of the Dy doped specimen was unstable at high temperatures in terms of grain growth. Until the specimen was densified, the tetragonality of Dy doped specimen was remarkably decreased and the substitution amount of Dy ions for A-site was larger than that of Y and Ho ions. After complete densification, the tetragonality was increased again and the B-site incorporation of Dy ions was increased far more than that of Y and Ho ions resulting in grain growth. This different behavior was considered to result in temperature coefficient of capacitance curves in the Dy doped specimen different from that of typical core-shell grains.
机译:研究了中间稀土离子掺杂行为的差异及其对BaTiO_3(BT)-MgO-Re_2O_3(Re = Dy,Ho,Y)体系介电性能和微观结构的影响。与Y和Ho相比,Dy离子由于其在BT中的高溶解度而为BT陶瓷提供了高致密化速率并大大增强了壳的形成。然而,就晶粒生长而言,掺Dy样品的微观结构在高温下不稳定。直到样品被致密化为止,掺specimen样品的四方性显着降低,并且离子对A位的取代量大于Y离子和Ho离子的取代量。完全致密化后,四方性再次提高,Dy离子的B部位掺入量大大超过Y和Ho离子,导致晶粒长大。认为这种不同的行为导致掺Dy样品中电容曲线的温度系数不同于典型的核-壳晶粒。

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