Injection and selfconsistent charge transport in bulk insulators

摘要

The new flight-drift model (FDM) of selfconsistent electron transport and electrical charge storage in wide-gap insulators reflects a more realistic simulation of these processes in dielectric and insulating materials than the former mainly ballistic model. Thus, electron-hole creation, their ballistic flight, followed by field-drift transport, and finally trapping in localized states and/or recombination are taken into account. The experimentally accessable quantities of field assisted secondary electron emission sigma as well as the resulting surface potential V_0 due to internal current j(x, t), charge rho(x, t), field F(x, t), and potential V(x, t) distributions are obtained. The calculations are performed for bulk Al_2O_3 ceramics with open and metal-coated and grounded surfaces.