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Light emitting FET for display, has electrode arranged such that charge carriers at interface between gate insulator and hole transport layer are controlled, where insulator is in direct contact with hole and electron transport layers
Light emitting FET for display, has electrode arranged such that charge carriers at interface between gate insulator and hole transport layer are controlled, where insulator is in direct contact with hole and electron transport layers
The FET has electron and hole injecting contacts (3, 4) that are in contact with electron and hole transport layers (9, 10), respectively. A gate electrode (6) is separated from the layers by a gate insulator (5). The gate electrode is arranged such that charge carriers at the interface between the insulator and the hole transport layer are modulated and controlled. A gate insulator is in direct contact with the transport layers. An independent claim is also included for a display with a light emitting field effect transistor.
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