首页> 外国专利> Light emitting FET for display, has electrode arranged such that charge carriers at interface between gate insulator and hole transport layer are controlled, where insulator is in direct contact with hole and electron transport layers

Light emitting FET for display, has electrode arranged such that charge carriers at interface between gate insulator and hole transport layer are controlled, where insulator is in direct contact with hole and electron transport layers

机译:用于显示的发光FET,其电极布置成可控制栅极绝缘体和空穴传输层之间界面的电荷载流子,其中绝缘体与空穴和电子传输层直接接触

摘要

The FET has electron and hole injecting contacts (3, 4) that are in contact with electron and hole transport layers (9, 10), respectively. A gate electrode (6) is separated from the layers by a gate insulator (5). The gate electrode is arranged such that charge carriers at the interface between the insulator and the hole transport layer are modulated and controlled. A gate insulator is in direct contact with the transport layers. An independent claim is also included for a display with a light emitting field effect transistor.
机译:FET具有分别与电子和空穴传输层(9、10)接触的电子和空穴注入触点(3、4)。栅电极(6)通过栅绝缘体(5)与各层分开。布置栅电极,使得在绝缘体和空穴传输层之间的界面处的电荷载流子被调制和控制。栅极绝缘体与传输层直接接触。还包括具有发光场效应晶体管的显示器的独立权利要求。

著录项

  • 公开/公告号DE202005016611U1

    专利类型

  • 公开/公告日2005-12-22

    原文格式PDF

  • 申请/专利权人 SCHOEN HENDRIK;

    申请/专利号DE20052016611U

  • 发明设计人

    申请日2005-10-24

  • 分类号H01L51/50;

  • 国家 DE

  • 入库时间 2022-08-21 21:19:56

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