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首页> 外文期刊>Journal of the European Ceramic Society >Barium strontium titanate nanocrystalline thin films prepared by soft chemical method
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Barium strontium titanate nanocrystalline thin films prepared by soft chemical method

机译:软化学法制备钛酸锶钡纳米晶体薄膜

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Barium strontium titanate (Ba_(0.65)Sr_(0.35)TiO_3) nanocrystalline thin films, which were produced by the soft chemical method, were crystallized at low temperature using a domestic microwave oven. A SiC susceptor were used to absorb the microwave energy and rapidly transfer the heat to the film. Low microwave power and short time have been used. The films obtained are crack-free, well-adhered, and fully crystallized. The microstructure displayed a polycrystalline nature with nanograin size. The metal-BST-metal structure of the thin films treated at 700 deg C show good electric properties. The ferroelectric nature of the BST35 thin film was indicated by butterfly-shaped C-V curves. The capacitance-frequency curves reveal that the dielectric constant may reach a value up to 800 at 100 kHz. The dissipation factor was 0.01 at 100 kHz. The charge storage density as function of applied voltage graph showed that the charge storage densities are suitable for use in trench type 64Mb (1-5 mu C/cm~2) and 265 Mb (2-11 mu C/cm~2) DRAMs.
机译:通过软化学方法制备的钛酸锶钡(Ba_(0.65)Sr_(0.35)TiO_3)纳米晶体薄膜使用家用微波炉在低温下结晶。 SiC基座用于吸收微波能量并将热量快速传递到薄膜上。低微波功率和短时间已被使用。所获得的薄膜无裂纹,附着力强且完全结晶。微观结构显示出具有纳米粒度的多晶性质。在700℃下处理的薄膜的金属-BST-金属结构显示出良好的电性能。 BST35薄膜的铁电特性由蝴蝶形C-V曲线表示。电容-频率曲线表明,介电常数在100 kHz时可能达到800。在100 kHz时,损耗因子为0.01。电荷存储密度与施加电压的关系曲线表明,电荷存储密度适用于沟槽型64Mb(1-5 mu C / cm〜2)和265 Mb(2-11 mu C / cm〜2)DRAM。 。

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