首页> 外文期刊>Journal of the European Ceramic Society >Comparison of fracture resistance as measured by the indentation fracture method and fracture toughness determined by the single-edge-precracked beam technique using silicon nitrides with different microstructures
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Comparison of fracture resistance as measured by the indentation fracture method and fracture toughness determined by the single-edge-precracked beam technique using silicon nitrides with different microstructures

机译:比较采用压痕断裂法测量的断裂强度和使用具有不同微观结构的氮化硅的单边缘预裂束技术测定的断裂韧性

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摘要

Because of the industrial need for an assessment of fracture resistance, K_R from small ceramic parts, K_R of Si_3N_4 ceramics has been measured by the indentation fracture (IF) method using representative formulae to evaluate the compatibility with the fracture toughness, K_(Ic) determined from the single-edge-precracked beam (SEPB) technique. K_R of the fine Si_3N_4 showed little dependence on the crack length, whereas the samples with coarse microstructures exhibited a rising R-curve behavior. The IF equation which gave the nearest value to K_(Ic) from SEPB was different depending on the microstructures. The assessment of fracture resistance with Miyoshi's equation was considered to be preferable for the flat R-curve behavior. By contrast, in the case of the rising R-curve behavior, it was revealed that the relationship between the IF and SEPB values was difficult to explain unless the effective crack extension against K_(Ic) for SEPB was clarified.
机译:由于工业上需要评估耐断裂性,陶瓷小零件的K_R,Si_3N_4陶瓷的K_R已通过压痕断裂(IF)方法进行测量,使用代表性公式来评估与断裂韧性的相容性,确定的K_(Ic)从单边预裂光束(SEPB)技术获得。细Si_3N_4的K_R对裂纹长度的依赖性很小,而具有粗糙微观结构的样品则表现出上升的R曲线行为。根据微观结构,从SEPB得到最接近K_(Ic)值的IF方程是不同的。认为用Miyoshi方程评估抗断裂性对于平坦的R曲线行为更可取。相反,发现在R曲线行为上升的情况下,除非明确了SEPB相对于K_(Ic)的有效裂纹扩展,否则很难解释IF和SEPB值之间的关系。

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