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首页> 外文期刊>Journal of the European Ceramic Society >Water vapor corrosion behavior of porous silicon carbide membrane support
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Water vapor corrosion behavior of porous silicon carbide membrane support

机译:多孔碳化硅膜载体的水蒸气腐蚀行为

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摘要

High-temperature water vapor corrosion of porous silicon carbide with and without additive alumina and its microstructural feature were investigated to examine the corrosion resistance of porous membrane supports for hydrogen production by steam modification of methane. Corrosion test was performed under similar condition as hydrogen production reaction occurred at 600 and 1000 deg C, 4 atm (0.4 MPa) and 3/1 = H_2O/N_2 where nitrogen gas was substituted for methane. In the corrosion at 600 deg C, the alumina-doped support showed weight gain of 1.3 mg/cm~2, while the undoped support showed weight gain of 0.7 mg/cm~2. In the alumina-doped support, pore growth was observed because of the coalescence among oxidized fine particles. In contrast, the pore size of the supports without alumina was slightly reduced, due to thin silica layer formed on the SiC particle. In the corrosion at 1000 deg C, the almost complete conversion to silica and the densification of silica were found. The densification of silica was due to the viscous flow sintering of silica under water vapor.
机译:研究了有和没有添加氧化铝的多孔碳化硅的高温水蒸气腐蚀及其微观结构特征,以检验通过甲烷蒸汽改性制氢的多孔膜载体的耐腐蚀性。腐蚀试验是在与制氢反应在600和1000摄氏度,4个大气压(0.4 MPa)和3/1 = H_2O / N_2的情况下发生的相似条件下进行的,其中用氮气代替了甲烷。在600℃的腐蚀中,掺杂氧化铝的载体的重量增加为1.3mg / cm 2,而未掺杂的载体的重量增加为0.7mg / cm 2。在氧化铝掺杂的载体中,由于氧化的细颗粒之间的聚结,观察到孔生长。相反,由于在SiC颗粒上形成的二氧化硅薄层,不含氧化铝的载体的孔径被略微减小。在1000℃下的腐蚀中,发现几乎完全转化为二氧化硅和二氧化硅的致密化。二氧化硅的致密化归因于水蒸气下二氧化硅的粘性流烧结。

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