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A 10-bit 250 MSPS charge-domain pipelined ADC with replica controlled PVT insensitive BCT circuit

机译:具有复制控制的PVT不敏感BCT电路的10位250 MSPS电荷域流水线ADC

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摘要

A low power 10-bit 250 MSPS charge-domain (CD) pipelined analog-to-digital converter (ADC) is introduced. The ADC is implemented in MOS bucket-brigade devices (BBDs) based CD pipelined architecture. A replica controlled boosted charge transfer (BCT) circuit is introduced to reject the influence of PVT variations on the charge transfer process. Based on replica controlled BCT, the CD pipelined ADC is designed and realized in a 1P6M 0.18 μm CMOS process. The ADC achieves an SFDR of 64.4 dB, an SNDR of 56.9 dB and an ENOB of 9.2 for a 9.9 MHz input; and an SFDR of 63.1 dB, an SNR of 55.2 dB, an SNDR of 54.5 dB and an ENOB of 8.7 for a 220.5 MHz input at full sampling rate. The DNL is ±0.5/- 0.55 LSB and INL is +0.8/- 0.85 LSB. The power consumption of the prototype ADC is only 45 mW at 1.8 V supply and it occupies an active die area of 1.56 mm~2.
机译:推出了一种低功耗10位250 MSPS电荷域(CD)流水线模数转换器(ADC)。该ADC在基于MOS桶式桥接设备(BBD)的CD流水线架构中实现。引入了副本控制的升压电荷转移(BCT)电路,以消除PVT变化对电荷转移过程的影响。基于副本控制的BCT,以1P6M 0.18μmCMOS工艺设计和实现CD流水线ADC。对于9.9 MHz输入,ADC的SFDR为64.4 dB,SNDR为56.9 dB,ENOB为9.2。在全采样率下,对于220.5 MHz输入,SFDR为63.1 dB,SNR为55.2 dB,SNDR为54.5 dB,ENOB为8.7。 DNL为±0.5 /-0.55 LSB,INL为+ 0.8 /-0.85 LSB。在1.8 V电源下,原型ADC的功耗仅为45 mW,其有效裸片面积为1.56 mm〜2。

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