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Total ionizing dose effects on 12-bit CBCMOS digital-to-analog converters

机译:总电离剂量对12位CBCMOS数模转换器的影响

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摘要

A digital-to-analog converter (DAC) in CBCMOS technology was irradiated by ~(60)Co γ-rays at various dose rates and biases for investigating the ionizing radiation response of the DAC. The radiation responses show that the function curve and the key electrical parameters of the DAC in CBCMOS technology are sensitive to total dose and dose rates. Under different bias conditions, the radiation failure levels were different, and the radiation damage under operation bias conditions was more severe. Finally, test results were preliminarily analyzed by relating the failure mode to DAC architecture and process technology.
机译:用〜(60)Coγ射线以各种剂量率和偏压照射CBCMOS技术中的数模转换器(DAC),以研究DAC的电离辐射响应。辐射响应表明,CBCMOS技术中DAC的功能曲线和关键电参数对总剂量和剂量率敏感。在不同的偏压条件下,辐射失效水平不同,在操作偏压条件下的辐射损伤更为严重。最后,通过将故障模式与DAC架构和处理技术相关联,初步分析了测试结果。

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