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首页> 外文期刊>Journal of Semiconductors >A 2.5-Gb/s fully-integrated, low-power clock and recovery circuit in 0.18-μmCMOS
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A 2.5-Gb/s fully-integrated, low-power clock and recovery circuit in 0.18-μmCMOS

机译:2.58 / s全集成,低功耗时钟和恢复电路,采用0.18-μmCMOS

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摘要

Based on the devised system-level design methodology, a 2.5-Gb/s monolithic bang-bang phase-locked clock and data recovery (CDR) circuit has been designed and fabricated in SMIC's 0.18-μm CMOS technology. The Pottbacker phase frequency detector and a differential 4-stage inductorless ring VCO are adopted, where an additional current source is added to the VCO cell to improve the linearity of the VCO characteristic. The CDR has an active area of 340 x 440 μm~2, and consumes a power of only about 60 mW from a 1.8 V supply voltage, with an input sensitivity of less than 25 mV, and an output single-ended swing of more than 300 mV. It has a pull-in range of 800 MHz, and a phase noise of -111.54 dBc/Hz at 10 kHz offset. The CDR works reliably at any input data rate between 1.8 Gb/s and 2.6 Gb/s without any need for reference clock, off-chip tuning, or external components.
机译:基于设计的系统级设计方法,采用中芯国际的0.18-μmCMOS技术设计并制造了2.5 Gb / s的单片式Bang-bang锁相时钟和数据恢复(CDR)电路。采用Pottbacker相位频率检测器和差分4级无电感环VCO,其中在VCO单元中增加了一个额外的电流源,以改善VCO特性的线性度。 CDR的有效面积为340 x 440μm〜2,从1.8 V电源电压消耗的功率仅约为60 mW,输入灵敏度小于25 mV,输出单端摆幅大于10V。 300毫伏。它具有800 MHz的引入范围,在10 kHz偏移下的相位噪声为-111.54 dBc / Hz。 CDR可以在1.8 Gb / s和2.6 Gb / s之间的任何输入数据速率下可靠地工作,而无需参考时钟,片外调谐或外部组件。

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