Inverse bias effect on the optical properties of light-emitting diodes with multiple InGaN/GaN quantum wells when irradiated by an electron beam in a scanning electron microscope

摘要

The cathodoluminescence spectra of fragments of light-emitting structures with multiple InGaN/GaN quantum wells, irradiated and unirradiated with low-energy electrons are studied, depending on the reverse voltage. It is shown that the intensity and position of the emission maximum of barely depends on voltage even at low radiation doses. This is explained by an increase in the effective donor concentration in the active region. The change in the position of the emission maximum is likely caused by stress relaxation in local regions of quantum wells.