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首页> 外文期刊>Journal of solid state electrochemistry >Microstructure and infrared reflectance modulation properties in DC-sputtered tungsten oxide films
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Microstructure and infrared reflectance modulation properties in DC-sputtered tungsten oxide films

机译:直流溅射氧化钨薄膜的微观结构和红外反射率调制特性

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Tungsten oxide (WO_3) films were deposited on indium tin oxide glass by reactive DC magnetron sputtering of a tungsten target in an oxygen and argon atmosphere at different substrate temperatures. Infrared reflectance modulation properties of the films were investigated in the wavelength range of 2.5-25 μm. The morphology and structure of the films are strongly dependent on the substrate temperature, and therefore have a great influence on infrared reflectance modulation properties. The charge capacity and diffusion coefficient of H+ ions in WO_3 films decrease, and the infrared reflectance modulation and color efficiency first increase and then decrease with increasing the deposition temperature. The values achieve a maximum of 40% and 18.5 cm~2 C~(-1), respectively, at 9 μm and 250 °C.
机译:在氧气和氩气气氛中,在不同的基板温度下,通过钨靶的反应性直流磁控溅射将氧化钨(WO_3)膜沉积在氧化铟锡玻璃上。在2.5-25μm的波长范围内研究了膜的红外反射率调制特性。膜的形态和结构强烈依赖于基板温度,因此对红外反射率调制性能具有很大的影响。 WO_3薄膜中H +离子的电荷容量和扩散系数降低,并且随着沉积温度的升高,红外反射率调制和色彩效率先升高,然后降低。在9μm和250°C下,该值分别达到最大值的40%和18.5 cm〜2 C〜(-1)。

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