Tungsten oxide (WO3) films were deposited on indium tin oxide glass by reactive DC magnetron sputtering of a tungsten target in an oxygen and argon atmosphere at different substrate temperatures. Infrared reflectance modulation properties of the films were investigated in the wavelength range of 2.5–25 μm. The morphology and structure of the films are strongly dependent on the substrate temperature, and therefore have a great influence on infrared reflectance modulation properties. The charge capacity and diffusion coefficient of H+ ions in WO3 films decrease, and the infrared reflectance modulation and color efficiency first increase and then decrease with increasing the deposition temperature. The values achieve a maximum of 40% and 18.5 cm2 C−1, respectively, at 9 μm and 250 °C.
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机译：在氧气和氩气气氛中，在不同的基板温度下，通过钨靶的反应性直流磁控溅射，将氧化钨（WO 3 ）膜沉积在氧化铟锡玻璃上。在2.5–25μm的波长范围内研究了薄膜的红外反射调制特性。膜的形态和结构强烈依赖于基板温度，因此对红外反射率调制性能具有很大的影响。 H + 离子在WO 3 薄膜中的电荷容量和扩散系数降低，并且随着沉积温度的升高，红外反射率调制和色效率先升高后降低。在9μm和250°C下，这些值分别达到最大值的40％和18.5 cm 2 C -1 。
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