Structure and electrical properties of Pb(Zr0.25Ti0.75)O3 thin films on LaNi(O3-Coated thermally oxidized Si substrates

摘要

Pb(Zr0.25Ti0.75)O3 (PZT25) thin films were pre pared on LaNiO3 -coated thermally oxidized silicon sub strates by chemical solution deposition method, where LaNiO3 electrodes were also prepared by a chemical so lution deposition technique. The dielectric constant and di electric loss of the PZT25 thin films were 570 and 0.057, respectively. The remanent polarization and coercive field were 20.11 mu C/cm~2 and 60.7 kV/cm, respectively. The PZT25 thin films on LaNiO3-coated thermally oxidized silicon substrates showed improved fatigue characteristics compared with their counterparts on plantium-coated silicon substrates.