Ferroelectric Properties of New Chemical Solution Derived SBT Thin Films for Non-Volatile Memory Devices

Seung-Hyun Kim; D.J.Kim; J.Im

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Ferroelectric Properties of New Chemical Solution Derived SBT Thin Films for Non-Volatile Memory Devices

机译：用于非易失性存储器件的新型化学溶液衍生的SBT薄膜的铁电性能

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摘要

Ferroelectric SBT (Sr/Bi/Ta = 0.8/2.3/2) thin films on Pt/ZrO_2/SiO_2/Si were successfully prepared by using an alkanolamine modified chemical solution depositoin method.

机译：采用链烷醇胺改性化学溶液沉积法成功地在Pt / ZrO_2 / SiO_2 / Si上制备了铁电SBT（Sr / Bi / Ta = 0.8 / 2.3 / 2）薄膜。

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《Journal of Sol-Gel Science and Technology》 |1999年第2期|共7页
作者
Seung-Hyun Kim; D.J.Kim; J.Im;
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正文语种 eng
中图分类胶体化学（分散体系的物理化学）;
关键词
ferroelectricity; chemical solution; alkanolamine; SBT; imprint; fatigue;

机译：铁电;化学溶液;烷醇胺;SBT;压印;疲劳;

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专利

1. Ferroelectric Properties of New Chemical Solution Derived SBT Thin Films for Non-Volatile Memory Devices [J] . Seung-Hyun Kim, D.J.Kim, J.Im Journal of Sol-Gel Science and Technology . 1999,第1a2期

机译：用于非易失性存储器件的新型化学溶液衍生的SBT薄膜的铁电性能
2. Low Temperature Process and Thin SBT Films for Ferroelectric Memory Devices [J] . MANFRED MORT, GUNTHER SCHINDLER, WALTER HARTNER Integrated Ferroelectrics . 2000,第1a4期

机译：铁电存储器件的低温工艺和SBT薄膜
3. Testing SBT Ferroelectric Thin Films for Non-Volatile RAM [J] . P. RAMOS, R. JIMENEZ, C. ALEMANY Integrated Ferroelectrics . 2004,第1期

机译：测试用于非易失性RAM的SBT铁电薄膜
4. FERROELECTRIC PROPERTIES OF SBT (Sr/Bi/Ta = 0.8/2.3/2) THIN FILMS USING A NOVEL CHEMICAL SOLUTION DEPOSITION [C] . Seung-Hyun Kim, D.J. Kim, S.K. Streiffer, Symposium on ferroelectric thin films . 1999

机译：使用新型化学溶液沉积的SBT（Sr / Bi / Ta = 0.8 / 2.3 / 2）薄膜的铁电性能
5. Ferroelectric and pyroelectric properties of solution derived bismuth titanium oxide thin films. [D] . Tran, Khang Duy. 1998

机译：溶液衍生的氧化钛铋薄膜的铁电和热电性质。
6. Effect of Mechanical Loads on Stability of Nanodomains in Ferroelectric Ultrathin Films: Towards Flexible Erasing of the Non-Volatile Memories [O] . W. J. Chen, Yue Zheng, W. M. Xiong, -1

机译：机械载荷对铁电超薄膜中纳米域稳定性的影响：灵活擦除非易失性存储器
7. Ferroelectric Properties of Bi3.25La0.75Ti3O12Thin Films with Eu Contents for Non-volatile Memory Device Application [O] . Kyoung-Tae Kim, Jong-Gyu Kim, Jong-Chang Woo, 2007

机译：BI3.25LA0.75TI3O12的铁电特性，具有欧盟含量的非易失性存储器件应用的薄膜
8. Chemical solution deposition of SrBi(sub 2)Ta(sub 2)O(sub 9) (SBT) films for non-volatile memory applications [R] . Lakeman, C. D. E. , Boyle, T. J. , Ruffner, J. A. , 1998

机译：用于非易失性存储器应用的srBi（sub 2）Ta（sub 2）O（sub 9）（sBT）薄膜的化学溶液沉积

Ferroelectric Properties of New Chemical Solution Derived SBT Thin Films for Non-Volatile Memory Devices

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