Synthesis, characterization, and dielectric properties of β-Gd2(MoO4)3 thin films prepared by chemical solution deposition

摘要

A chemical solution was employed for deposition of gadolinium molybdate [β-Gd2(MoO4)3] thin films. Gadolinium acetylacetonate hydrate {[CH3COCH = C(O-)CH3]3GdxH2O}, molybdenum isopropoxide {Mo[OCH (CH3)2]5}, and acetylacetone were used in synthesis of this molybdate. Thermal gravimetry and differential scanning calorimetry suggested that crystallization of β-Gd2(MoO4)3 occurs at around 480 °C. Phase-pure, orthorhombic β-Gd2(MoO4)3 films were deposited on Pt/Ti/SiO2/Si(100) substrates. β-Gd2(MoO4)3 films crystallized at 750 °C showed a strong (00l) preferred orientation. The film dielectric constant measured was 10～14 and the dielectric loss was less than 3%. There was no marked signature in the permittivity at the bulk Curie temperature, approximately 159 °C.