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首页> 外文期刊>Journal of Sol-Gel Science and Technology >Band-gap energy estimation from diffuse reflectance measurements on sol-gel and commercial TiO2: a comparative study
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Band-gap energy estimation from diffuse reflectance measurements on sol-gel and commercial TiO2: a comparative study

机译:从溶胶-凝胶和商用TiO2的漫反射测量中带隙能量估计:比较研究

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摘要

A comparison of the band gap energy estimated from UV-vis reflectance spectra of TiO2 powders prepared by sol-gel route versus commercial TiO2 powders, nano-powder, bulkpowder and P25 is reported. The experimental results obtained from the optical absorption spectra were reported for all the TiO2 samples. Graphic representations were used to calculate E_g: absorbance versus λ.; F(R) versus E; (F(R) hv)~n versus E, with n = 1/2 for an indirect allowed transition and n = 2 for a direct allowed transition. From the results, it could be seen that E_g strongly varied according to the equation used for the graphic representation. Differences in E_g up to 0.5 eV for the same semiconductor depending on the transition chosen were observed. Accurate E_g estimation in the four semiconductors studied was obtained by using the general equation α (hv) ≈ B (hv — E_g)~n (where α ~ F(R)) and indirect allowed transition.
机译:据报道,通过溶胶-凝胶法制备的TiO2粉末与市售TiO2粉末,纳米粉末,块状粉末和P25的紫外可见光谱比较,估计了带隙能量。从光吸收光谱获得的实验结果被报道为所有TiO 2样品。图形表示用于计算E_g:吸光度对λ。 F(R)对E; (F(h)hv)〜n与E的关系,其中n = 1/2表示间接允许的跃迁,n = 2表示直接允许的跃迁。从结果可以看出,E_g根据用于图形表示的方程式而变化很大。对于相同的半导体,观察到的E_g差异高达0.5 eV,这取决于所选的跃迁。通过使用一般公式α(hv)≈B(hv_E_g)〜n(其中α〜F(R))和间接允许的跃迁,可以获得在所研究的四个半导体中准确的E_g估计。

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