Electrical spin injection from room-temperature ferromagnetic (Ga, Mn)N in nitride-based spin-polarized light-emitting diodes

摘要

We present the electrical spin injection from room-temperature ferromagnetic (Ga, Mn) N in nitride-based spin-polarized light-emitting diodes. The electroluminescence spectra from the spin LED indicate the existence of the spin polarization via optical polarization of emitted light up to room temperature. This demonstrates that the spin injection from the (Ga, Mn) N layer into (In, Ga) N quantum wells was achieved persisting up to room temperature by comparing it with the magnetic field dependence of the Hall resistance, which is proportional to the out-of-plane magnetization. These results support that (Ga, Mn) N is an appropriate material for a spin injection source in room-temperature operating semiconductor spintronic devices.