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Magnetic field dependence of exciton linewidth in quantum wells made of semimagnetic semiconductors: comparison of theory and experiment

机译:半磁性半导体制成的量子阱中激子线宽的磁场依赖性:理论与实验的比较

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摘要

This paper presents the result of theoretical and experimental studies of the magnetic field dependence of the exciton linewidth in Cd1-yMgyTe/Cd1-xMnxTe/Cd1-yMgyTe quantum wells. The reflection spectra from the structures with various values of x were measured at T = 2 K in magnetic fields up to 3.5 T applied parallel to the structure's growth axis. In the theoretical studies, the fluctuations of both concentration and spin projection of magnetic ions have been considered as the main reasons for the exciton line broadening. It is shown that the experimentally observed broadening of the sigma(-) exciton line and the narrowing of the sigma(+) exciton line with increasing magnetic field are in good agreement with theoretical calculations.
机译:本文介绍了Cd1-yMgyTe / Cd1-xMnxTe / Cd1-yMgyTe量子阱中激子线宽的磁场依赖性的理论和实验研究结果。在T = 2 K且平行于结构的生长轴的最大磁场强度为3.5 T的磁场中,测量了具有各种x值的结构的反射光谱。在理论研究中,磁性离子的浓度和自旋投影的波动都被认为是激子线变宽的主要原因。结果表明,随着磁场的增加,实验观察到的sigma(-)激子线变宽和sigma(+)激子线变窄与理论计算吻合良好。

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