Simulations for printing contacts with near field x-rays

摘要

In ultra high resolution lithography, sometimes called near field x-ray lithography, Fresnel diffraction is deliberately used to increase resolution: the contraction in current occurring beyond a clear mask feature has, further, important experimentally beneficial effects that were previously overlooked. All the key features of the technique have, by now, been demonstrated and previously reported. The technique is also an enhancement of the most-developed next generation lithography. The enhancement has fundamental advantages, including an increase in mask-wafer Gap (the Gap scales as the square of the width of a clear mask feature); reduced exposure times; more easily fabricated masks; high density prints by multiple exposures; high contrast; elimination of sidebands; reduction in the effects of mask defects, compact masks, etc. We have, previously reported experimental and simulated prints from lines and more complex flag and bridge structures; here we report simulations for symmetrical contacts. More particularly, in the printing of circular features, it is shown that a demagnification factor around 7 can be routinely used to optimize mask-wafer Gap. Although the Gap is significantly extended by using larger clear mask features, finer prints can still be developed.