The statistical time-delay and the breakdown formative time contributions to the memory effect in Ne at 7 mbar pressure

摘要

The results of the electrical breakdown time-delay as a function of the relaxation time tau, known as 'the memory curve', are presented. The memory curve was experimentally established for the relaxation times from 3 ms to 300 s, for the Ne-filled diode at 7 mbar pressure. Statistical analysis was used to analyse the obtained time-delay values. The results show that for the relaxation times tau less than or equal to 0.1 s the dominant part of the total time-delay is the breakdown formative time (t(f) similar to 0.1 ms). The breakdown formative time obtained in this investigation shows the same 'memory effect' as the breakdown total time-delay, because it slowly increases with tau. For tau > 0.1 s, the statistical time-delay makes up the dominant part of the total time-delay, as was reported earlier. [References: 30]