Growth of ZnSe : N epilayers by pulsed laser ablation deposition

摘要

Epilayers of nitrogen doped ZnSe have been grown on GaAs(100) substrates by pulsed laser ablation deposition assisted by a nitrogen beam produced by a supersonic nozzle beam source. X-ray photoelectron spectroscopy (XPS) shows that the epilayers are composed of 83.8% Zn and Se, 10.4% N and 5.8% O, and other kinds of impurity are rare. XPS spectra of Zn(2p(3/2)) and N(1s) core levels indicate that doped nitrogen with an estimated concentration of over 10(21) cm(-3) exists in the as-grown epilayer. Atomic force microscopy indicates that the surface of an as-grown ZnSe epilayer on GaAs(100) is flat with roughness of about 1.2 nm, which is less than that of some good-quality metalorganic vapour phase epitaxy grown layers. X-ray diffraction results show that these ZnSe epilayers are a characteristic of single crystallinity. [References: 18]