首页> 外文期刊>Journal of Physics, D. Applied Physics: A Europhysics Journal >Electrical measurement on a phthalocyanine Langmuir-Blodgett film: I. Comprehensive studies on the origins of scattering and drift of resistance values
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Electrical measurement on a phthalocyanine Langmuir-Blodgett film: I. Comprehensive studies on the origins of scattering and drift of resistance values

机译:酞菁Langmuir-Blodgett膜的电学测量:I.电阻值的散射和漂移的起源的综合研究

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摘要

The semi-conducting properties of an organic Langmuir-Blodgett (LB) film have been investigated using two configurations of LB film and electrodes. The studied material is the copper tetraoctadecyltetrapyridino [3,4-b:3 prime ,4 prime -g:3 double prime ,4 double prime -1:3 triple prime ,4 triple prime -q] porphyrazinium bromide (CuS18). The scattering of resistance values appears to be dependent on the configuration. Films in the `down' configuration (electrodes under the LB film) present resistance values that are less scattered but higher than the ones of films in the `top' configuration (electrodes over the LB film). The good but less reproducible contact which is observed in the `top' configuration is certainly provided by the penetration of gold atoms inside the organic film. Similarly, a study on the factors which influence the stability of organic/inorganic devices suggests that these factors originate from material structural evolution mainly near the shadow area of the electrodes.
机译:已使用LB膜和电极的两种配置研究了有机Langmuir-Blodgett(LB)膜的半导体性能。所研究的材料是四十八烷基四吡啶鎓铜[3,4-b:3素,4素-g:3双素,4双重素-1:3三素,4三素-q]溴化卟啉锌(CuS18)。电阻值的散布似乎取决于配置。 “向下”配置的膜(LB膜下方的电极)的电阻值比“顶部”配置的膜(LB膜上方的电极)的电阻值散布小,但电阻值更高。在“顶部”构型中观察到的良好但可再现性差的接触肯定是由金原子在有机膜内部的渗透提供的。同样,对影响有机/无机器件稳定性的因素的研究表明,这些因素主要来自电极影子区域附近的材料结构演变。

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