Temperature dependences of the electrical conductivity, Hall effect and thermoelectric power of Tl2Se3 single crystals

摘要

The electrical conductivity (sigma) and Hall coefficient (R-H) of single crystals grown from a melt have been investigated over the temperature range 183-388 K. Our investigation showed that our samples are p-type conducting. The dependence of the Hall mobility on temperature was presented graphically. The forbidden energy gap was calculated and found to be 1.34 eV whereas the ionization energy of the impurity level was 0.12 eV. The values of the electrical conductivity, Hall coefficient and carrier concentration at room temperature were 1.44 x 10(-3) Omega(-1) cm(-1), 6.33 x 10(5) cm(3) C-1 and 9.39 x 10(11) cm(3) respectively. The Hall mobility at room temperature (mu(H)) was found to be 9.886 x 10(2) cm(2) V-1 s(-1). Also, the thermoelectric power (TEP) was investigated in the temperature range 180-376 K. The relation between the TEP and the concentration of charge carriers and electrical conductivity was studied. Mobilities, effective masses, relaxation times, diffusion lengths and diffusion coefficients both for majority and for minority carriers were obtained at room temperature. [References: 11]