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首页> 外文期刊>Journal of Physics, D. Applied Physics: A Europhysics Journal >Studies on the correlation between electrochromic colouration and the relative density of tungsten trioxide (WO3-x) thin films prepared by electron beam evaporation
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Studies on the correlation between electrochromic colouration and the relative density of tungsten trioxide (WO3-x) thin films prepared by electron beam evaporation

机译:电子束蒸发制备三氧化钨(WO3-x)薄膜的电致变色着色与相对密度的相关性研究

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摘要

The colouration efficiency in the electrochromic devices depends upon the amount of intercalating charge in the tungsten oxide (WO3-x) thin films. One of the physical properties of the film that significantly influence the intercalating charge is the film density. In this paper, the dependence of intercalated charge in WO3-x thin films on the film density is reported. The amorphous tungsten oxide thin films have been prepared by electron beam evaporation at three substrate temperatures: 300, 470 and 570 K. With increasing substrate temperature, the refractive indices of the films increase. The relative film density calculated from the refractive index using the Lorentz-Lorentz relationship increases with the substrate temperature. With increasing density of the WO3 thin films, the diffusion coefficients of protons and the amount of intercalated charge decrease. The intercalated charge in the coloured electrochromic thin films brings about a change in the surface work function of the thin film; the difference in the surface work function (between the coloured and the bleached states) is measured by the Kelvin probe. In the present investigation, an intercalating charge of 59, 48 and 39 mC cm(-2) brings about a change of 0.24, 0.16 and 0.13 eV in the surface work function of the WO3 thin films.
机译:电致变色器件中的着色效率取决于氧化钨(WO3-x)薄膜中的嵌入电荷量。显着影响插入电荷的膜的物理性质之一是膜的密度。本文报道了WO3-x薄膜中嵌入电荷对薄膜密度的依赖性。通过在三种基板温度:300、470和570 K下通过电子束蒸发制备了非晶态氧化钨薄膜。随着基板温度的升高,薄膜的折射率增加。使用洛伦兹-洛伦兹关系从折射率计算出的相对膜密度随着基板温度的增加而增加。随着WO 3薄膜密度的增加,质子的扩散系数和嵌入电荷的量降低。在有色电致变色薄膜中插入的电荷导致薄膜的表面功函数发生变化。用开尔文探针测量表面功函数(在着色状态和漂白状态之间)的差异。在本研究中,插入电荷59、48和39 mC cm(-2)导致WO3薄膜的表面功函数发生0.24、0.16和0.13 eV的变化。

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