Room temperature synthesis of nanostructured mixed-ordered-vacancy compounds (OVCs) and chalcopyrite CuInSe2 (CIS) thin films in alkaline chemical bath

摘要

Room temperature synthesis of ordered-vacancy-compounds (OVCs) and copper indium diselenide (CuInSe2, CIS) by cation and anion exchange reactions of solid CdS thin films with CIS ionic solution in an alkaline chemical bath is reported. The growth parameters such as pH, deposition time and concentration of the solutions were optimized to achieve uniform thin films. Nanostructured CdS thin films (150 nm thick) prepared by chemical bath deposition are used for the deposition of OVC and CIS thin films. The ion exchange reaction between the CdS thin film and the CIS ionic solutions transforms the yellow colour CdS film into faint black, indicating the formation of OVC and CIS film. The resultant films were annealed in air at 200 degrees C for 1 h and further subjected to characterization using the x-ray diffraction, transmission electron microscopy, energy dispersive x-ray analysis, x-ray photoelectron spectroscopy, scanning electron microscopy, atomic force microscopy, optical absorption and electrical measurement techniques. The OVC and CuIn3Se5 nanodomains are observed in chalcopyrite CIS thin films and these films have nanostructured morphology onto amorphousanocrystalline phase of CdS. The OVC-CIS films are p-type with a band gap energy of 1.453 eV.