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首页> 外文期刊>Journal of Physics, D. Applied Physics: A Europhysics Journal >Nucleation, growth and characterization of cubic boron nitride (cBN) films
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Nucleation, growth and characterization of cubic boron nitride (cBN) films

机译:立方氮化硼(cBN)薄膜的成核,生长和表征

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摘要

Cubic BN (cBN) has a set of extreme properties similar or even superior to diamond. The advance of science and technology of cBN has however been severely hampered by the poor quality of the material available (random orientation, limited film thickness, poor crystallinity and adhesion with substrates due to a non-cubic BN interlayer). This paper reviews the recent progress in the nucleation, growth and characterization techniques of cBN films. It describes various successful approaches in interface engineering and growth techniques in increasing film thickness, improving crystallinity and adhesion of cBN films to the substrate, which are the major issues hindering cBN films for both mechanical and electronic applications. Based on observations of the surface and interface structures, we further discuss the growth mechanisms of cBN films via physical and chemical routes.
机译:立方氮化硼(cBN)具有一组类似于或什至优于金刚石的极端性能。然而,由于可用材料的质量差(取向随机,膜厚有限,结晶度差以及由于非立方BN夹层而与基材的粘合性),cBN科学技术的发展受到了严重阻碍。本文综述了cBN薄膜的成核,生长和表征技术的最新进展。它描述了界面工程和生长技术中各种成功的方法,这些方法可以增加膜厚,改善cBN膜的结晶度和粘附性,这是阻碍cBN膜用于机械和电子应用的主要问题。基于对表面和界面结构的观察,我们进一步讨论了cBN膜通过物理和化学途径的生长机理。

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