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首页> 外文期刊>Journal of Physics, B. Atomic, Molecular and Optical Physics: An Institute of Physics Journal >Dielectronic recombination rate coefficients for the CoI isoelectronic sequence
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Dielectronic recombination rate coefficients for the CoI isoelectronic sequence

机译:CoI等电序列的双电子复合率系数

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摘要

In our recent reports (2007 J. Phys. B: At. Mol. Opt. Phys. 40 4269-86 and 2008 J. Quant. Spectrosc. Radiat. Transfer 109 2000-2008), we performed detailed and large-scale ab initio calculations on the total dielectronic recombination (DR) rate coefficients for Co-like gold and tungsten. Here we extend the calculations for another eight ions (Kr9+, Mo15+, Ag20+, Xe27+, Pr32+, Dy39+, At58+ and U65+) along the CoI isoelectronic sequence in the ground state employing the flexible atomic code. The total DR rates mainly come from complex series 3d(8)4ln'l' and 3p(5)3d(9)4ln'l'. The complex series 3p(5)3d(10)n'l' and 3d(8)5ln'l' also contribute significantly at low (< 0.1E(I), E-I is the ionization energy of the corresponding Ni-like ions) and high (> 1.0E(I)) electron temperatures, respectively. On the basis of the calculated results, a general analytic formula for the total DR rate coefficients of all the ions along the CoI isoelectronic sequence is constructed. This formula can generally reproduce the calculated DR rate coefficients to within 3% for electron temperatures above 0.1E(I). Comparisons of the present results with those obtained from the commonly used Burgess-Merts (BM) semiempirical formula show that the BM formula is not adequate to predict the total DR rate coefficients at relatively low electron temperatures and for low-Z ions. In addition, the total DR rate coefficients from the first excited state are also presented.
机译:在我们最近的报告中(2007 J. Phys。B:At。Mol。Opt。Phys。40 4269-86和2008 J. Quant。Spectrosc。Radiat。Transfer 109 2000-2008),我们进行了详细而又大规模的从头算类金和钨的总双电子复合率系数的计算。在这里,我们沿着基态的CoI等电子序列扩展了对另外8个离子(Kr9 +,Mo15 +,Ag20 +,Xe27 +,Pr32 +,Dy39 +,At58 +和U65 +)的计算,采用了灵活的原子代码。总DR速率主要来自复杂序列3d(8)4ln'l'和3p(5)3d(9)4ln'l'。复杂系列3p(5)3d(10)n'l'和3d(8)5ln'l'在低位(<0.1E(I),EI是相应的Ni类离子的电离能)也有显着贡献和高(> 1.0E(I))电子温度。根据计算结果,建立了沿CoI等电序列的所有离子的总DR速率系数的一般解析公式。对于高于0.1E(I)的电子温度,该公式通常可以将计算得出的DR速率系数重现到3%以内。将本结果与从常用的Burgess-Merts(BM)半经验公式获得的结果进行比较,结果表明BM公式不足以预测相对较低的电子温度和低Z离子的总DR速率系数。另外,还给出了来自第一激发态的总DR速率系数。

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