Development of Materials-based Pitch Split Process

摘要

There are several options for sub-10nm fabrication such as extreme ultra violet (EUV) lithography, directed self-assembly (DSA), and ArF multiple patterning. For further extension of ArF lithography, one of the key challenges is cost effectiveness. In this paper, a new double patterning method pattern split process (PSP), which is based on dual tone development is demonstrated. Different from conventional DTD, additional acid and base materials were used in this process to gain high deprotection contrast. By PSP, double pitch frequency pattern which has improved roughness was successfully obtained. Also other basic parameter such as focus margin, wafer uniformity and resolution are reported.