...
首页> 外文期刊>Journal of Photopolymer Science and Technology >Mid-end Process Technologies for Advanced Packaging of LSI Devices
【24h】

Mid-end Process Technologies for Advanced Packaging of LSI Devices

机译:用于LSI器件高级封装的中端工艺技术

获取原文
获取原文并翻译 | 示例
   

获取外文期刊封面封底 >>

       

摘要

As the demand for advanced packaging is growing, the value of mid-end process technologies is increasing in an effort to realize innovative device products. Substrate-free packaging and 3D integration are coming with the challenges to polymer resin deposition for interlayer dielectrics films and final passivation films and their developments of process integration. For cost reduction of Fan-out Wafer Level Packaging, we have demonstrated thick film deposition on square panel substrates using the photo-sensitive resin materials tailored to spray-coating and slit-coating. Chip stacking of a high performance logic chip on a high band-width DRAM needs fine pitch patterning of a thick photo-resist for Cu electroplated redistribution lines on the DRAM. Our successful process integration has confirmed that slight oxidation of the Cu seed surface to form Cu2O is preferred to improve adhesion between the resist and the Cu surface. Finally, the restoration of plasma damaged surface of a polymer final passivation film on advanced low-k chips to improve reliability of fiip chip packages has been discussed as one of typical examples of materials design for process integration.
机译:随着对高级包装的需求不断增长,中端工艺技术的价值也在不断增长,以实现创新的设备产品。无基板封装和3D集成面临着用于层间电介质膜和最终钝化膜的聚合物树脂沉积及其工艺集成发展的挑战。为了降低扇出晶圆级包装的成本,我们证明了使用适合喷涂和狭缝涂布的光敏树脂材料,可以在方形面板基板上沉积厚膜。高性能逻辑芯片在高带宽DRAM上的芯片堆叠需要对DRAM上的Cu电镀再分配线进行厚间距光刻胶的精细间距构图。我们成功的工艺集成证实,为了提高抗蚀剂和Cu表面之间的附着力,最好将Cu晶种表面轻微氧化以形成Cu2O。最后,已经讨论了在先进的低k芯片上修复聚合物最终钝化膜的等离子损坏表面,以提高fiip芯片封装的可靠性,作为工艺集成材料设计的典型示例之一。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号