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首页> 外文期刊>Journal of Photopolymer Science and Technology >On/off Pulse Modulation of Atmospheric-Pressure Helium/Argon Inductively Coupled Plasma Microjet for Plasma Processing of Polymers
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On/off Pulse Modulation of Atmospheric-Pressure Helium/Argon Inductively Coupled Plasma Microjet for Plasma Processing of Polymers

机译:常压氦气/氩气感应耦合等离子体微射流的开/关脉冲调制,用于聚合物的等离子体处理

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To explore the low-temperature surface treatment of polymers using high-density atmospheric-pressure inductively coupled plasma (AP-ICP) microjet, the critical parameters determining the breakdown and sustainment of the pulse-modulated (PM) helium/argon (He/Ar) AP-ICP microjet were studied by varying the Ar flow rate, pulse-modulation frequency, f, VHF power, P, and duty ratio, DR. The AP-ICP microjet source used in this study consists of a planar serpentine-shaped antenna and an alumina discharge tube of 0.8 mm inner diameter. Although the minimum VHF power, P, required for the breakdown was 95 W for the pure helium plasma, it could be reduced to 51 W owing to the Penning effect by adding Ar (4-7 sccm) to He (3'slm). The lower limits of DR for the He/Ar PM plasma breakdown and sustainment were investigated by changing f at the constant P= 90 W. It was found that the minimum DR for the generation of the PM plasma without using the auxiliary ignitor was proportional to f. The linear relation indicates the existence of minimal on-time period that is presumably a requisite rise time of PM VHF voltage in the plasma circuit. The minimum DR for the breakdown became higher than that for the sustainment at f> 26 kHz, where the latter DR was 5-10 W. Consequently, it was found that the plasma operation with low net power is possible particularly under the low-f pulse modulation condition. Furthermore, a preliminary experiment on the surface treatment of polycarbonate by scanning the PM AP-ICP microjet under low-f conditions demonstrated the applicability of this plasma system to the surface processing of polymers without the thermal damage.
机译:为了探索使用高密度大气压感应耦合等离子体(AP-ICP)微型射流进行聚合物的低温表面处理,关键参数决定了脉冲调制(PM)氦/氩(He / Ar )通过改变Ar流量,脉冲调制频率f,VHF功率P和占空比DR来研究AP-ICP微型喷射器。本研究中使用的AP-ICP微型喷射源由一个平面的蛇形天线和一个内径为0.8 mm的氧化铝放电管组成。尽管对于纯氦等离子体而言,击穿所需的最小VHF功率P为95 W,但是由于Penning效应,可以通过向He(3'slm)中添加Ar(4-7 sccm)将其降低至51W。通过在常数P = 90 W下改变f来研究He / Ar PM等离子体破裂和维持的DR的下限。发现不使用辅助点火器产生PM等离子体的最小DR与F。线性关系表明存在最小接通时间,这大概是等离子电路中PM VHF电压的必要上升时间。击穿的最小DR高于维持在f> 26 kHz时的最小DR,后者的DR为5-10W。因此,发现特别是在低f下,可以用低净功率进行等离子体操作脉冲调制条件。此外,通过在低f条件下扫描PM AP-ICP微型喷嘴对聚碳酸酯进行表面处理的初步实验表明,该等离子体系统适用于没有热损伤的聚合物表面处理。

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