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首页> 外文期刊>Journal of Photopolymer Science and Technology >Reactive-monolayer-assisted Thermal Nanoimprint Lithography with a Benzophenone-containing Trimethoxysilane Derivative for patterning Thin Chromium and Copper Films
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Reactive-monolayer-assisted Thermal Nanoimprint Lithography with a Benzophenone-containing Trimethoxysilane Derivative for patterning Thin Chromium and Copper Films

机译:含苯甲酮的三甲氧基硅烷衍生物的反应性单层辅助热纳米压印光刻技术,用于对铬和铜薄膜进行构图

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摘要

Reactive-monolayer-assisted thermal nanoimprint lithography was applied for patterning thin films of chromium (Cr) and copper (Cu). The metal surfaces with the oxide layer were modified with a benzophenone-containing trimethoxysilane derivative to induce a surface graft reaction of the benzophenone moiety with poly(styrene) (PS) used for a resist polymer. A thin PS film was successfully prepared as a resist layer for wet etching on the modified metal surfaces by spin-coating, followed by exposure to ultraviolet light and annealing without dewetting the resist layer. The thin PS film could be patterned by thermal nanoimprinting involving a removal of the residual layer by exposure to UV/ozone. The patterned PS film worked as a resist mask for acidic aqueous wet etchants for Cr and Cu. We demonstrated that thin patterned films of Cr and Cu on micrometer scales could be fabricated by simple wet etching.
机译:反应性单层辅助热纳米压印光刻技术用于构图铬(Cr)和铜(Cu)的薄膜。用含二苯甲酮的三甲氧基硅烷衍生物对具有氧化物层的金属表面进行改性,以引发二苯甲酮部分与用于抗蚀剂聚合物的聚(苯乙烯)(PS)的表面接枝反应。成功地制备了PS薄膜作为抗蚀剂层,用于通过旋涂在改性金属表面上进行湿法蚀刻,然后在不使抗蚀剂层润湿的情况下暴露于紫外线和退火。可以通过热纳米压印图案化PS薄膜,包括通过暴露于UV /臭氧去除残留层。图案化的PS膜用作Cr和Cu酸性含水湿法蚀刻剂的抗蚀剂掩模。我们证明了可以通过简单的湿法刻蚀来制作微米级的Cr和Cu薄膜图案化薄膜。

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