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Proposal and research on using tungsten carbonyl-CVD process for making W-coating PFMs and W-tubes

机译:关于使用羰基钨化学汽相淀积工艺制备W涂层PFM和W管的提案和研究

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It is proposed to use W(CO)(6)-CVD (chemical vapor deposition) process to make plasma facing materials (PFMs). The advantages of using W(CO)(6)-CVD process are as follows: low decomposition temperature of about 400 degrees C, no corrosion for the processing facilities and no reduction process required, etc. Tungsten coatings were deposited on copper substrates at 400, 450, 500 and 550 degrees C in hydrogen gas flow. The microstructure, thickness and phase analysis were carried out using SEM and XRD. Coatings with the thickness of 12.5 mu m have been deposited on copper substrates at 500 degrees C. The micro-hardness values of the as-prepared beta-W coatings are 500-600 HV. After annealing in high purity hydrogen at 900 degrees C, alpha-W coatings were obtained. Besides, a thin W tube has also been obtained under the same conditions on copper tube with nitrogen gas flow. (C) 2014 Elsevier B.V. All rights reserved.
机译:建议使用W(CO)(6)-CVD(化学气相沉积)工艺制造面向等离子体的材料(PFM)。使用W(CO)(6)-CVD工艺的优点如下:分解温度低至约400摄氏度,对加工设备无腐蚀,无需还原工艺,等等。钨涂层在400℃时沉积在铜基板上,450、500和550摄氏度的氢气流中。显微结构,厚度和相分析是使用SEM和XRD进行的。厚度为12.5μm的涂层已在500摄氏度的温度下沉积在铜基板上。所制备的β-W涂层的显微硬度值为500-600 HV。在900摄氏度的高纯度氢气中退火后,获得了α-W涂层。此外,在相同的条件下,在具有氮气流的铜管上也获得了细的W管。 (C)2014 Elsevier B.V.保留所有权利。

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