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首页> 外文期刊>Journal of Nuclear Materials: Materials Aspects of Fission and Fusion >Deuterium trapping in tungsten deposition layers formed by deuterium plasma sputtering
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Deuterium trapping in tungsten deposition layers formed by deuterium plasma sputtering

机译:氘等离子体溅射形成的钨沉积层中的氘捕集

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A study of the influence of the deposition conditions on the surface morphology and deuterium (D) concentration in tungsten (W) deposition layers formed by magnetron sputtering and in the linear plasma generator has been carried out. ThickWlayers (P0.4 lm) deposited onto copper substrates demonstrate areas of pilling and, after post-deposition heating to 1300 K, flaking-off and fracturing. For thin W layers (680 nm) deposited onto stainless steel (SS) andWsubstrates, no areas of flaking-off and fracturing exist both after deposition and after post-deposition heating to 673 K for the SS substrate and to 1300 K for the Wsubstrate. The concentration of deuterium in the W layers was found to decrease with increasing substrate temperature and with increasing tungsten deposition rate. For layers with relatively high concentration of oxygen (0.20–0.60 O/W), a decrease of the D concentration with increasing substrate temperature is more pronounced than that for layers deposited in good vacuum conditions. To describe the evolution of the D/W ratio with the substrate temperature and the tungsten deposition rate, an empirical equation proposed by De Temmerman and Doerner [J. Nucl. Mater. 389 (2009) 479] but withalternative parameters has been used.
机译:已经进行了沉积条件对通过磁控溅射形成的钨(W)沉积层和线性等离子体发生器中的表面形态和氘(D)浓度的影响的研究。沉积在铜基板上的ThickWlayers(P0.4 lm)表现出起球区域,沉积后加热到1300 K后,会剥落并破裂。对于在不锈钢(SS)和W基板上沉积的薄W层(680 nm),在沉积后和沉积后加热后,SS基板至673 K,W基板至1300 K均不存在剥落和破裂的区域。发现W层中的氘浓度随着衬底温度的升高和钨沉积速率的增加而降低。对于具有较高氧气浓度(0.20-0.60 O / W)的层,与在良好真空条件下沉积的层相比,随着衬底温度的升高,D浓度的降低更为明显。为了描述D / W比随衬底温度和钨沉积速率的变化,由De Temmerman和Doerner提出了一个经验方程[J.核仁母校389(2009)479],但使用了其他参数。

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