Simulation and analysis on the property of aluminum back-surface-field of monocrystalline silicon solar cells

摘要

The effects of thickness and doping profile of heavily-doped Aluminum Back-Surface-Field(AI-BSF), as well as the trap levels of impurities in AI-BSF, on electronic properties of n~+pp~+ monocrystalline solar cells, were investigated by PC1D The results show the electronic properties of the solar cells are hardly affected by the gradient of the doping profile of AI-BSF, but mainly depend on the Al/B atomic amount in AI-BSF. The optimum thickness of AI/B-BSF is about 10μm with the average Al/B atomic concentration of AI-BSF less than -6.56x10~(18)cm~(-3). The effect of the oxygen trap level on the electronic properties relates to the back surface recombination velocity (BSRV) and the average Al/B atomic concentration.