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首页> 外文期刊>Journal of optoelectronics and advanced materials >N,N '-Bis(2,2-diphenylvinyl)-N,N '-diphenylbenzidines with reactive functional groups as hole-transporting glass-forming materials
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N,N '-Bis(2,2-diphenylvinyl)-N,N '-diphenylbenzidines with reactive functional groups as hole-transporting glass-forming materials

机译:具有反应性官能团的N,N'-双(2,2-二苯基乙烯基)-N,N'-二苯基联苯胺作为空穴传输玻璃形成材料

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摘要

Derivatives of N,N'-bis(2.2-diphenylvinyl)-N,N'-diphenylbenzidine containing reactive functional groups were synthesized by the multi-step synthetic rout. The materials were examined by various techniques including differential scanning calorimetry, UV and fluorescence spectrometry, electron photoemission and time of flight techniques. The electron photoemission spectra of layers of the amorphous materials showed the ionization potentials of 5.35 eV. Hole drift mobilities in the layers of bisphenol Z pol carbonate containing 33-50% of the derivatives of N,N'-bis(2,2-diphenylvinyl N,N'-diphenylbenzidine range from 1.6x10(-5) to 1.3x10(-4) cm(2)/Vs at high electric fields.
机译:通过多步合成路线合成了含有反应性官能团的N,N′-双(2.2-二苯基乙烯基)-N,N′-二苯基联苯胺的衍生物。通过各种技术检查了这些材料,包括差示扫描量热法,紫外和荧光光谱法,电子光发射和飞行时间技术。非晶材料层的电子光发射光谱显示出5.35eV的电离电势。含有33-50%N,N'-双(2,2-二苯基乙烯基N,N'-二苯基联苯胺的衍生物)的双酚Z pol碳酸酯层中的空穴漂移迁移率范围为1.6x10(-5)至1.3x10( -4)cm(2)/ Vs在高电场下。

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